A MODEL BASED METHOD FOR COMPARING THE PROPERTIES OF SOME METAL-Ta2O5/SiO2-Si STRUCTURES

Nenad Novkovski

Abstract


Oxygen annealed radio frequency (RF) reactively sputtered and thermally grown (thermal) Ta2O5 films on sili-con were comparatively studied by using combination of C-V and I-V measurements and the previously developed comprehensive model for the metal-Ta2O5/SiO2-Si structures. Dielectric properties of separate layers were extracted by comparing the experimental and the theoretical results. It is found that the net leakage properties of the Ta2O5 layer are significantly better in the case of RF than thermal, particularly in the case of the Au gate. Excessive growth of the SiO2 layer of about 0.3 nm in the case of RF films leads to an unwanted increase of the equivalent oxide thickness. Appropriate interface engineering is required in order to prevent the SiO2 excessive growth during the oxygen anneal-ing. Such a growth can reduce the beneficial effects of the annealing on the net properties of Ta2O5 films obtained by RF.

Keywords


high permittivity dielectrics; conduction in dielectrics; leakage currents model

Full Text:

PDF

References


A. Amato, G. Cagnoli, M. Canepa, E. Coillet, J. Degallaix, V. Dolique, D. Forest, M. Granata, V. Martinez, C. Michel, L. Pinard, High-Reflection Coatings for Gravitational-Wave Detectors: State of The Art and Future Developments, J. Phys.: Conf. Ser., 957 (2018), pp. 012006-1-012006-7.

J. Sohn, Y. Kwon, Y. Lee, C. Lee, Light out-coupling efficiency enhancement in organic light-emitting diodes using a multilayer stacked elec-trode with sol-gel processed Ta2O5. Opt. Exp., 25(2017), pp. 27886-27895.

S. Ryu, S.K. Kim, B. J. Choi, Resistive switching of Ta2O5-based self-rectifying vertical-type resis-tive switchingmemory, J. Elec. Mat.47 (2018), pp.162-166.

Yuki Shigeoka, TsuruokaTohru, Hasegawa Tsuy-oshi, The rate limiting process and its activation energy in the forming process of a Cu/Ta2O5/Pt gapless-type atomic switch, Jap. J. Appl. Phys., 57 (2018), pp. 035202.

S. Sathasivam, B. A. Williamson, A. Kafizas, S. A. Althabaiti, A. Y. Obaid, S. N. Basahel, D. O. Scanlon, C.J. Carmalt, I. P. Parkin, Computational and experimental study of Ta2O5thin films, The J. Phys. Chem.C,121(2017), pp. 202-210.

U. Schroeder, K. Cho, S. Slesazeck, Materials for DRAM Memory Cell Applications, in Thin Films On Silicon: Electronic and Photonic Applications8 (2017), pp. 369-401.

A. P. Huang, P. K. Chu, Improvement of interfa-cial and dielectric properties of sputtered Ta2O5 thin films by substrate biasing and the underlying mechanism, J. Appl. Phys., 97 (2005), pp. 114106-1-114106-5.

E. Atanassova, N. Novkovski, A. Dimitrova, M. Pecovska-Gjorgjevich, Oxygen annealing modifi-cation of conduction mechanism in thin rf sput-tered Ta2O5 on Si. Solid St. Electron., 46 (2002), pp.1887-1898.

E. Atanassova, A. Paskaleva, N. Novkovski, and M. Georgieva, Conduction mechanisms and relia-bility of thermal Ta2O5–Si structures and the effect of the gate electrode, J. Appl. Phys., 97 (2005), pp. 094104-1-094104-11.

L. Wang, H. Liu, Y. Jiang, X. Yang, D. Liu, Y. Ji, F. Zhang, D. Chen, Effects of hot-isostatic press-ing and annealing post-treatment on HfO2 and Ta2O5 films prepared by ion beam sputtering, Optik-International Journal for Light and Electron Optics, 142 (2017), pp. 33-41.

M. C. Sekhar, N. N. K. Reddy, H.S. Akkera, B. P. Reddy, V. Rajendar, S. Uthanna, S.H. Park, Role of interfacial oxide layer thickness and annealing temperature on structural and electronic properties of Al/Ta2O5/TiO2/Si metal–insulator–semicon-ductor structure, J. All. Comp., 718 (2017), pp.104-111.

J. Han, Q. Zhang, W Fan., G. Feng, Y. Li, A. Wei, R. Hu, Q. Gu, The characteristics of Ta2O5 films deposited by radio frequency pure oxygen ion as-sisted deposition (RFOIAD) technology, J. Appl. Phys., 121(2017), pp. 065302-1-065302-9.

N. Novkovski and E. Atanassova, Injection of holes from the silicon substrate in Ta2O5 films grown on silicon, Appl. Phys. Lett., 85 (2004), pp. 3142-3144.

N. Novkovski, E. Atanassova, A comprehensive model for the I–V characteristics of metal-Ta2O5/SiO2-Si structures, Appl. Phys., A, 83 (2006), pp. 435-445.

N. Novkovski, Physical modeling of electrical and dielectric properties of high-κ Ta2O5 based MOS capacitors on silicon, FactaUniversitatis, Series: Electronics and Energetics, 27 (2014), pp. 259-273.

K. Maitra, N. Bhat, Analytical approach to inte-grate the different components of direct tunneling current through ultrathin gate oxides in n-channel metal–oxide–semiconductor field-effect transis-tors, J. Appl. Phys., 93 (2003), 1064-1068.

E. Atanassova, T. Dimitrova, Thin Ta2O5 layers on Si as an alternative to SiO2 for high density DRAM applications, in Handbook of surfaces and

interfaces of materials, Edited by Hari Singh Nai-wa, Volume 4: Solid thin films and layers, Aca-demic Press, San Diego, (2001),pp. 439-479.

S. M. Sze and K. K. Ng, Physics of Semiconductor Devices, 3rd Edition, John Wiley & Sons, New York,2007.

D. K. Schroder, Semiconductor Material and De-vice Characterization, 3rd Edition, John Wiley & Sons (2006).

E. Atanassova, A. Paskaleva, Challenges of Ta2O5 as high-κ dielectric for nanoscale DRAMs, Micro-electronics Reliability, 47 (2007), pp. 913-923.




DOI: http://dx.doi.org/10.20903/csnmbs.masa.2018.39.1.116

Refbacks

  • There are currently no refbacks.


Creative Commons License
This work is licensed under a Creative Commons Attribution 4.0 International License.



Contact details

Bul. Krste Misirkov br.2
1000 Skopje, Republic of Macedonia
Tel. ++389 2 3235-400
cell:++389 71 385-106
mail: manu@manu.edu.mk
About the journal

CSNMBS is a part of the MASA Contribution series. Published by the Section Natural, Mathematical and Biotechnical Sciences.
About this site

Maintained by the Researh center for Materials and Enviroment - MANU/MASA.
Site (including the theme) set, adapted by MASA - CSIT.